Thomson Reuters
 

 ScienceWatch

CORPORATE RESEARCH FRONTS - 2010

May 2010

This list of corporate research fronts from Essential Science IndicatorsSM is from the sixth bimonthly period of 2009, and covers areas in the physical sciences. Source dates are January 31, 2004-December 31, 2009, the sixth bimonthly period of 2009 (sliding 6-year period).

       Research Front Name Percentage of corporate affiliations Leading
corporation
HIGH-PERFORMANCE ENHANCEMENT-MODE ALGAN/GAN HEMTS FLUORIDE-BASED PLASMA TREATMENT; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; HIGH-POWER ALGAN/GAN HEMTS; HIGH BREAKDOWN VOLTAGE ALGAN-GAN POWER-HEMT DESIGN 36 Cree Inc
HYDROGEN STORAGE REACTIONS; ENHANCED HYDROGEN STORAGE KINETICS; NEW HYDROGEN STORAGE MATERIALS; HYDROGEN STORAGE PERFORMANCES; UNSOLVATED MAGNESIUM BOROHYDRIDE MG(BH4)(2) 27 Toyota Industries Corp
FULLY EPITAXIAL CO/MGO/CO MAGNETIC TUNNEL JUNCTIONS; SINGLE-CRYSTAL FE/MGO/FE MAGNETIC TUNNEL JUNCTIONS; COFEB/MGO/COFEB MAGNETIC TUNNEL JUNCTIONS; FULLY EPITAXIAL FE/MGO/FE TUNNEL JUNCTIONS; GIANT TUNNEL MAGNETORESISTANCE RATIO 30 IBM Corp
5 GBIT/S CARRIER-INJECTION-BASED SILICON MICRO-RING SILICON MODULATORS; HIGH-SPEED SILICON OPTICAL MODULATOR; 40 GBIT/S SILICON OPTICAL MODULATOR; SILICON PHOTONIC CHIP; HIGH SPEED SILICON MACH-ZEHNDER MODULATOR 29 Intel Corp
ROOM TEMPERATURE IONIC LIQUIDS; LI/LICOO2 CELL USING ROOM TEMPERATURE IONIC LIQUIDS (RTILS); IONIC LIQUID ELECTROLYTE SYSTEMS; LOW-VISCOSITY IONIC LIQUIDS; IMPROVED IONIC LIQUID ELECTROLYTE 24 Nisshinbo Industries, Inc
ATOMIC LAYER DEPOSITED HIGH-KAPPA GATE DIELECTRICS; GAAS PASSIVATION USING ATOMIC LAYER-DEPOSITED HIGH-KAPPA DIELECTRICS; AL2O3 GATE DIELECTRICS; HFO2 GATE DIELECTRICS; THIN GE OXYNITRIDE GATE DIELECTRIC 28 IBM Corp
TRANSPARENT FLEXIBLE THIN-FILM TRANSISTORS; AMORPHOUS OXIDE SEMICONDUCTORS; AMORPHOUS INDIUM GALLIUM ZINC OXIDE THIN-FILM TRANSISTORS; INDIUM GALLIUM ZINC OXIDE CHANNEL BASED TRANSPARENT THIN FILM TRANSISTORS 23 Hewlett Packard Corp
LOW-RESISTANCE MAGNETIC TUNNEL JUNCTIONS; NANOSCALE MAGNETIC TUNNEL JUNCTIONS; SPIN-TRANSFER TORQUE; SPIN-TRANSFER SWITCHING; DOUBLE-POINT-CONTACT SPIN-TRANSFER DEVICES 20 Hitachi Global Storage Technologies
HIGH DIELECTRIC CONSTANT GATE OXIDES; HFO2 HIGH-DIELECTRIC-CONSTANT GATE OXIDE; HIGH-K GATE DIELECTRIC STACKS; POLYSILICON METAL OXIDE INTERFACE; HIGH DIELECTRIC CONSTANT OXIDES 20 Kintech Technol Ltd Kintech Technologies Co, Ltd

2003-2009_6



Corporate Research Fronts : 2010 - Corporate Research Fronts : May 2010 - Corporate Research Fronts
Science Home  |  About Thomson Reuters  |  Site Search
Copyright  |  Terms of Use  |  Privacy Policy
Previous
left arrow key
Next
right arrow key
Close Move